Al2O3- Sapphire Wafer, R Plane, 100mm dia x 0.46mm, 1SP - ALR100D046C1US High-Throughput Mixing & Pressing The equipment can be used

The equipment can be used with 110V with a 1000W Transformer

The lowest discharging voltage: 0 V

Digital Humidity & Temperature Monitor

65535 cycles

Non-Flammable

Al2O3- Sapphire Wafer, R Plane, 100mm dia x 0.46mm, 1SP - ALR100D046C1US High-Throughput Mixing & Pressing The equipment can be usedFearures: Monocrystalline Sapphire Wafer Purity> =99. 995% Wafer size: 100 mm dia x 0. 46 mm+ 25um thickness Orientation: R plane (11 02) + 0. 5 deg Orientaion Flat: 31 + 2. 5 mm Primary Flat Location: Projected C Axis 45 + 2 degree Surface Roughness: Ra <= 5 Angstrom One side polished Edge Chamfering: Ground with 45 degree chamfering Back surface: 1 + 0. 2 um (by lapping process) Bow: <= 20um Laser Mark: none Package: Each wafer is packed in 1000