Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 0.1-1.1 ohm-cm Au/Cr coated SiO2/Si Resistivity <0

Resistivity                        <0

Model MSK-ESDC-80-Series

Nominal FTO Film thickness: <150 nm

Pressure Conversion Table (Notice the Load is not strictly linear to the Air Pressure):

Pouch Cell Assembling

Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 0.1-1.1 ohm-cm Au/Cr coated SiO2/Si Resistivity <0Ge Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Ga doped Conductor type: P type Resistivity: 0. 1 1. 1 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: