Si wafer (100), 3 "dia x0.5 mm, 1sp, N type, P-doped, R:1-10 ohm.cm - SIPa76D05C1R1 Graphite 76 Array (Capacity): 3*3=9

76 Array (Capacity):  3*3=9

Surface Polishing:           two sides epi polished

205 mm Height

With lid closed: 340mm(L) × 300mm(W) × 400mm(H)

Output: DC 12V 2A Suspension Flow 0

Si wafer (100), 3 "dia x0.5 mm, 1sp, N type, P-doped, R:1-10 ohm.cm - SIPa76D05C1R1 Graphite 76 Array (Capacity): 3*3=9Single crystal Si Conductivity: N type ( P doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 5 mm Orientation: (100) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater