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InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La 5"thickness (900 x 600 x
InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La 5"thickness (900 x 600 x
$126.50
Description
5"thickness (900 x 600 x 60 mm
To use outside the glove box
45") 1 Resin50 Resin Bonded Ceramics for Sample Holding 2 LSS009 Aluminum Plate 2 LSS010 Wexford for samples bounding 1 set LSS012 One Fuse 1 LSS013 AC Power Cord 1 LSS014 Screw Driver 1 set LSS015 Two Motor belts per set for of Driving Motor 1 set LSS016 A bag of 150-Lube Cutting Lubricant
ready for GSL-1100X-SPC12
Mass resistivity: 0
InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La 5"thickness (900 x 600 xGrowth method LEC Orientation (411) 0. 5 Deg Orientation Flat N A Doping S doped Conductivity type N type Carrier Concentration <7E17 ~ 1E18 cm3 Mobility >10000 cm2 V. S EPD <2E4 cm 2 Standard thickness 500 20 mm Size ellipse shape, (area > 30mm diameter) Polish one side
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