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InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes Two Dimensional Crystal Warning: Please always clean the
InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes Two Dimensional Crystal Warning: Please always clean the
$126.50
Description
Warning: Please always clean the machine after each use
4543 b = 5
which will keep the milling jar's temperature below 30°C
Semi-Conducting
uniform temperature zone
InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes Two Dimensional Crystal Warning: Please always clean theGrowth method LEC Orientation (511) 0. 5 Deg Orientation Flat N A Doping S doped Conductivity type N type Carrier Concentration <7E17 ~ 1E18 cm3 Mobility >10000 cm2 V. S EPD <2E4 cm 2 Standard thickness 500 20 mm Size ellipse shape, (area > 30mm diameter) Polish one side
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, S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes Two Dimensional Crystal Warning: Please always clean the){kind=link}
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