InSb (100) 5x5x 0.5mm, Undoped, N type, 2 sides polished Heating Elements User-friendly Computer control interface can

User-friendly Computer control interface can easily program heating steps

the pressure of 600kN

Configuration of Right Flange:

TTV:                                <=15 um

The equipment can be used with 110V with a 1000W Transformer

InSb (100) 5x5x 0.5mm, Undoped, N type, 2 sides polished Heating Elements User-friendly Computer control interface canInSb substrate (N type, undoped) 2sp Size: 5x5 x 0. 5 mm Orientation <100> + 0. 5o Polishing: both sides epi polished Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Doping Undoped Conductivity type N type Carrier Concentration (2 7)E14 @77K Mobility 4E4 cm2 Vs EPD <300 cm 2