M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods Revision:SEMI M88-0119 - Current 5-0302 (Reapproved 0308)

5-0302 (Reapproved 0308)

静電気の数々の制御方法は，静電気を許容レベル以下に制御するために装置設計に組み込むことができる。このガイドは，基本的には装置製造業者が装置設計を行う際に使用される。

SEMI E1-0697 (technical revision)

Semiconductor and FPD factories require high levels of power quality due to the sensitivity of equipment and process controls

It includes a specific transfer command state model and stocker controller state model as the basis for all equipment of this class

M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods Revision:SEMI M88-0119 - Current 5-0302 (Reapproved 0308)Shrinkage and advanced integration of semiconductor components demand lower metal contamination levels in component fabrication processes and in base silicon wafer substrates. The industry has for some time widely employed surface photovoltage (SPV) measurements of minority carrier diffusion lengths as a technique to assess metal impurities in silicon wafers. Samples, however, often require surface preparation prior to SPV measurements because SPV