MF138800 - SEMI MF1388 - Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors Revision:SEMI MF1388-0707 (Reapproved 1023) - Current SEMI E76 — Guide for

SEMI E76 — Guide for 300mm Process Equipment Points of Connection to Facility Services

SEMI E69-0298 (Reapproved 0913)

SEMI D6-0211 (Reapproved 0117)

This Specification is intended to address a short-term need for handling wafers

SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers

MF138800 - SEMI MF1388 - Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors Revision:SEMI MF1388-0707 (Reapproved 1023) - Current SEMI E76 — Guide forThis Test Method covers the measurement of generation lifetime and generation velocity of silicon wafers. The measurement requires the fabrication of a guard ring MOS capacitor (refer to Figure 1). This Test Method is therefore destructive to the silicon wafer. This test may also be applied to semiconductor materials other than silicon and to insulators other than silicon dioxide, but the details of capacitor fabrication and the analyses and